DMN5L06VA-7 parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ FET, MOSFET/ DMN5L06VA-7

The pictures are for reference only

Brand:

Diodes

Model:

DMN5L06VA-7

Description:

MOSFET 2N-CH 50V 0.28A SOT-563

Stock:

18481

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

280mA

Drain source voltage (Vdss)

50V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

50pF @ 25V

On resistance (maximum) for different Ids and Vgs

3 Ω @ 200mA,2.7V

Power - maximum

150mW

Vgs (th) (maximum) for different Ids

1.2V @ 250µA

packing

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-563,SOT-666

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

DMN5L06VA-7（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18481,Price reference "real-time change" China/Hongkong。 DMN5L06VA-7 package/specs, Download DMN5L06VA-7、Datasheet。